AGR21030EF 30 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral
MOSFET
Introduction
The AGR21030EF is a high-
voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 2.
0 Unit °C/W
Table 2.
Absolute Maximum Ratings* Parameter Sym Value Drain-source
Voltage VDSS 65 Gate-source
Voltage VGS –0.
5, 15 Total Dissipation at TC = 25 °C PD 87.
5 Derate Above 25 ° C — 0.
5 CW RF Input Power — 10 (VDS = 31 V) Operating Juncti...