AM1030N 100V N-Channel
MOSFET
GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FEATURES 3.
0A, 100V, RDS(on) = 0.
19Ω @VGS = 10 V Low gate charge ( typical 5.
8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability
PIN ASSIGNMENT The package of AM1030N is€ SOT...