FINAL
Am28F256
256 Kilobit (32 K x 8-Bit)
CMOS 12.
0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time
s
CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption
s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP
s 10,000 write/erase cycles minimum s Write and erase
voltage 12.
0 V ±5%
s Latch-up protected to 100 mA from –1 V to VCC +1 V
s Flasherase Electrical Bulk Chip-Erase
— One second typical chip-erase
s Flashrite Programming
— 10 µs typical byte-program — 0.
5 second typical chip program
s Command register...