Part Number
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AM2931-110 |
Manufacturer
|
STMicroelectronics |
Description
|
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
Published
|
Mar 23, 2005 |
Detailed Description
|
AM2931-110
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
. . . . . . . .
REFRACTORY/GOLD METALLIZATION EMITTER ...
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Datasheet
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AM2931-110
|
Overview
AM2931-110
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN.
WITH 6.
2 dB GAIN
.
400 x .
500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110
DESCRIPTION The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.
Low RF thermal resistance, refractory/go...
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