Analog Power
N-Channel 200-V (D-S)
MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • PoE PSE and PD Circuits • LED Inverter Circuits • 48V-Input DC/DC Conversion Circuits
AM7000N
VDS (V) 200
PRODUCT SUMMARY rDS(on) (mΩ)
295 @ VGS = 10V 340 @ VGS = 5.
5V
ID (A) 3 2.
7
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source
Voltage
VDS 200
Gate-Source
Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
3 2.
2 20 4.
6
Power Dissipation a
TA=25°C TA=70°C
PD
3.
5 2
Operatin...