AO3404A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 30V ID = 5.
8A RDS(ON) 25mΩ RDS(ON) 35mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.
5V)
SOT23
Top View
Bottom View
D D
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
ID IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG...