AO4441
60V P-Channel
MOSFET
General Description
Product Summary
The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.
5V)
-60V -4A 100mW 130mW
Top View
D D D D
SOIC-8 Bottom View
G
S S S
PIN 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C Power Dissipation A TA=70°C
VGS ID IDM PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum ...