AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard product AO4813 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = -30V (VGS = -10V) ID = -7.
1 A RDS(ON) 25mΩ (VGS = -10V) RDS(ON) 40mΩ (VGS = -4.
5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
D2
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G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuo...