Part Number
|
AO4822 |
Manufacturer
|
Alpha & Omega Semiconductors |
Description
|
Dual N-Channel MOSFET |
Published
|
Jun 7, 2007 |
Detailed Description
|
AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4822 uses advanced trench techn...
|
Datasheet
|
AO4822
|
Overview
AO4822 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4822 is Pb-free (meets ROHS & Sony 259 specifications).
AO4822L is a Green Product ordering option.
AO4822 and AO4822L are electrically identical.
Features
VDS (V) = 30V ID = 8.
5A (VGS = 10V) RDS(ON) 16mΩ (VGS = 10V) RDS(ON) 26mΩ (VGS = 4.
5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
com
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source ...
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