January 2003
AO6407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -5 A RDS(ON) 45mΩ (VGS = -4.
5V) RDS(ON) 60mΩ (VGS = -2.
5V) RDS(ON) 85mΩ (VGS = -1.
8V)
TSOP6 Top View
D 16 D D 25 D G 34 S
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipa...