AO7600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO7600/L uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary
MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications.
Both devices are ESD protected.
AO7600 and AO7600L are
electrically identical.
-RoHS Compliant
-AO7600L is Halogen Free
Features
n-channel VDS (V) = 20V ID = 0.
9A (VGS=4.
5V)
p-channel -20V
-0.
6A (VGS=-4.
5V)
RDS(ON)
RDS(ON)
300mΩ (VGS=4.
5V) 550mΩ (VGS=-4.
5V)
350mΩ (VGS=2.
5V) 700mΩ (VGS=-2.
5V)
450mΩ (VGS=1.
8V) 950mΩ (VGS=-1.
8V)
SC-70-6 (SOT-323) Top View
D1 D2 G...