AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 1.
8V while retaining a 12V V GS(MAX) rating.
This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.
Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications).
AO8808L is a Green Product ordering option.
AO8808 and AO8808L are electrically identical.
Features
VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) 14mΩ (VGS = 10V) RDS(ON) 15mΩ (VGS = 4.
5V) RDS(ON) 20mΩ (VGS = 2.
5V) RDS(ON) 28mΩ ...