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AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications).
AO8808AL is a Green Product ordering option.
AO8808A and AO8808AL are electrically identical.
Features
VDS (V) = 20V ID = 7.
9A (VGS = 10V) RDS(ON) 14mΩ (VGS = 10V) RDS(ON) 15mΩ (VGS = 4.
5V) RDS(ON) 20mΩ (VGS = 2.
5V) RDS(ON) 28mΩ (VGS = 1.
8V) ESD Rating: 2000V HBM
TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2...