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AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Standard Product AO8822 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 20V ID = 7 A (VGS = 10V) RDS(ON) 21mΩ (VGS = 10V) RDS(ON) 24mΩ (VGS = 4.
5V) RDS(ON) 28mΩ (VGS = 3.
6V) RDS(ON) 32mΩ (VGS = 2.
5V) RDS(ON) 50mΩ (VGS = 1.
8V)
TSSOP-8 Top View...