Part Number | AOTF2606L |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | sc N-Channel MOSFET Transistor AOTF2606L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ ·Enhancement mode ·Fast Switching Speed ·... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ... |
File Size | 257.68KB |
Datasheet |
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AOTF2606L : AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 72A 6.5mΩ ( 6.2mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF2606L G D S AOB2606L G S S AOT2606L G.