| Part Number | AP1203AGMT-HF |
| Manufacturer | Advanced Power Electronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... |
| Features |
ngle Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
16.2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 4.5 25
Units ℃/W ℃/W
Data & specificat... |
| File Size | 148.24KB |
| Datasheet |
|
AP1203AGMT-HF-3 : Advanced Power Electronics Corp. AP1203AGMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 12mΩ 37A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK®5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile. S S D D D D S G PMPAK®5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID a.