AP2306N
Advanced Power Electronics Corp.
▼ Capable of 2.
5V gate drive ▼ Lower on-resistance ▼ Surface mount package
S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 32mΩ 5.
3A
Description
SOT-23
G
Advanced Power
MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
D
G S
Absolute Maximum Ratings
com
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
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