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Part Number
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AP30G40AEO |
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Manufacturer
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Advanced Power Electronics |
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Title
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Description
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Advanced Power Electronics Corp.
AP30G40AEO
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ ICP=130A @VGE=3.3V ▼ Low Gate Dri...
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Features
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00V
-7
Qgc Gate-Collector Charge
VGE=4V
- 18
td(on)
Turn-on Delay Time
VCC=320V
- 200
tr td(off)
Rise Time Turn-off Delay Time
IC=130A RG=10Ω
- 1.3 - 600
tf Fall Time
VGE=3.3V
- 1.4
Cies Input Capacitance
VGE=0V
- 4000
Coes Output Capacitance
VCE=30V
- 30
Cres RthJA1
Reverse T...
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File Size
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57.14KB |
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Datasheet
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AP30G40AEO PDF File
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