AP4224M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N
MOSFET Package
D1 D2 D1 D2
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
G2 S2
30V 14mΩ 10A
SO-8
S1
G1
Description
www.
DataSheet4U.
com The Advanced Power
MOSFETs from APEC provide the
designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 10 8 30 2 0.
016 -55 to 150...