AP4228M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N
MOSFET Package
S2 G2 D1 D1 D2 D2
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
30V 26mΩ 6.
8A
SO-8
S1
G1
Description
com
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
G1 S1 D1 G2
D2
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current
1 3
Rating 30 ± 20 6.
8 5.
5 40 2 0.
016 -55 to 150 -55 to 150
Units V V A A...