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AP4955GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement
D2 D2 D1 D1
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON)
G2 S2 S1 G1
-20V 45mΩ -5.
6A
▼ Low Gate Charge ▼ Fast Switching Characteristic
ID
Description
TThe Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -20 ±20...