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AP4957GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement
D1 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
G2 S2
-30V 24mΩ -7.
7A
▼ Dual P
MOSFET Package
SO-8
S1 G1
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 ±2...