AP9926EO
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low com drive current ▼ Surface mount package
D2 S2 G2 S2
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON)
S1 D1 G1 S1
20V 28mΩ 4.
6A
TSSOP-8
ID
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 20 ± 12...