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AP9T15GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.
5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 50mΩ 12.
5A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V ...