D
TO-247
G S
APT1001R1BN 1000V 10.
5A 1.
10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source
Voltage
APT1001R3BN 1000V 10.
0A 1.
30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
1000 10.
5 42 ± 30 310 2.
48
1000 10 40
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source
Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic...