APT1001RSVR
1000V 11A 1.
000Ω
POWER MOS V ®
D3PAK
Power MOS is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Surface Mount D3PAK Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1001RSVR UNIT Volts Amps
1000 11 44 ±30 ±40 280 2.
24 -...