APT10050B2VFR APT10050LVFR
POWER MOS V ®
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VR
1000V 21A 0.
500W
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
D G S
• 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT1...