APT10M25BVR
100V 75A 0.
025Ω
POWER MOS V®
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
• Popular TO-247 Package
G
MAXIMUM RATINGS
S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C 5 Pulsed Drain Current 1 5 Gate-Source
Voltage Continuous Gate-Source
Voltage Transi...