Part Number
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APT35GN120L2DQ2G |
Manufacturer
|
Advanced Power Technology |
Description
|
IGBT |
Published
|
May 7, 2008 |
Detailed Description
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TYPICAL PERFORMANCE CURVES ®
APT35GN120L2DQ2 APT35GN120L2DQ2G*
APT35GN120L2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb...
|
Datasheet
|
APT35GN120L2DQ2G
|
Overview
TYPICAL PERFORMANCE CURVES ®
APT35GN120L2DQ2 APT35GN120L2DQ2G*
APT35GN120L2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff.
The Trench Gate design results in superior VCE(on) performance.
Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient.
Built-in gate resistance ensures ultra-reliable operation.
Low gate charge simplifies gate drive design and minimizes losses.
TO-264 Max
G
C
• • • •
• 1200V NPT Field Stop
E
Trench Gate: Low VCE(on) Easy Paralleling 10µs Short ...
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