TYPICAL PERFORMANCE CURVES ®
APT35GP120JDQ2 1200V
APT35GP120JDQ2
POWER MOS 7 IGBT
®
E G C
E
The POWER MOS 7® IGBT is a new generation of high
voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • RBSOA Rated
S
OT
22
7
ISOTOP ®
"UL Recognized"
file # E145592
C G E
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MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Continuous Collector Current @ TC = 25°C Continuous Coll...