D
TO-247
G S
APT5020BN 500V
®
28.
0A 0.
20Ω 27.
0A 0.
22Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source
Voltage
APT5022BN 500V
N - CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 5020BN APT 5022BN UNIT Volts Amps
500 28 112 ± 30 360 2.
9
500 27 108
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source
Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Con...