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TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
®
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high
voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 28A • 100 kHz operation @ 400V, 44A • SSOA rated
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Gate-Emitter
Voltage Transient Conti...