| Part Number | APT50GP60JDQ2 |
| Manufacturer | Advanced Power Technology |
| Title | POWER MOS 7 IGBT |
| Description | www..com TYPICAL PERFORMANCE CURVES ® APT50GP60JDQ2 600V APT50GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new... |
| Features |
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX U... |
| Published | Dec 19, 2006 |
| Datasheet |
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