APT6027HVR
600V 20A 0.
270Ω
POWER MOS V ®
TO-258
Power MOS is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular TO-258 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT6025BVR UNIT Volts Amps
600 20 80 ±30 ±40 250 2.
0 -55 to 150...