APT8030B2VR
800V 27A 0.
300Ω
POWER MOS V ®
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • New T-MAX™ Package
(Clip-mounted TO-247 Package)
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT8030B2VR UNIT Volts Amps
800 27 108...