High Performance 1M×4
CMOS DRAM
AS4C14400 AS4C14405
®
1M-bit × 4
CMOS DRAM (Fast page mode or EDO)
Preliminary information Features
• Organization: 1,048,576 words × 4 bits • High speed
- 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Low power consumption
- Active: 385 mW max (-60) - Standby: 5.
5 mW max,
CMOS I/O
• Fast page mode (AS4C14400) or EDO (AS4C14405)
Pin arrangement
SOJ
I/O0 I/O1 WE RAS A9 1 2 3 4 5
A0 A1 A2 A3 VCC
9 10 11 12 13
Selection guide
Maximum RAS access time Maximum CAS access time
Maximum column address access tim...