3.3V 256K x 18 Flowthrough Synchronous SRAM
April 2005 ® AS7C33256NTF18B 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTDTM Features • • • • • • • • Organization: 262,144 words × 18 bits NTD™ architecture for efficient bus operation Fast clock to data access: 7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available...
Alliance Semiconductor Corporation