Features
• Single 2.
7V - 3.
6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1- to 64-byte Page Write Operation • Low Power Dissipation – 15 mA Active Current – 20 µA
CMOS Standby Current • Hardware and Software Data Protection • Data Polling for End of Write Detection • High Reliability
CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only
256K (32K x 8) Battery-
Voltage Parallel EEPROMs
AT28BV256
1.
...