Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer • Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation • Low Power Dissipation
– 50 mA Active Current
– 10 mA
CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability
CMOS Technology
– Endurance: 5.
104 Read/Modify Write Cycles @ Ground Level
– Data Retention: 10 Years • Operating Range: 4.
5V to 5.
5V, -55 to +125°C •
CMOS and TTL Compatible Inputs and Outputs • No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 • Tested up ...