Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 200 µA
CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability
CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply •
CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only
1-megabit (12...