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Features
• Single
Voltage Read/Write Operation: 2.
65V to 3.
3V (BV), 3.
0V to 3.
6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • •
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection ...