Features
• 2.
7V to 3.
6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation
– 25 mA Active Current – 50 µA
CMOS Standby Current • Typical 10,000 Write Cycles
Description
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 2...