Features
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com Organized as 2M x 8 bits Single 3.
3V Power Supply Stacks of 16 SRAM 128K x AT65609E Die Access Time: 40 ns read, 35 ns write Very Low Power Consumption – Active: 130 mW (Typ) – Standby: 1 mW (Typ) TTL-Compatible Inputs and Outputs Die Designed on 0.
35 Micron Process No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 200 krads (Si) according to MIL STD 883 Method 1019 Wide Temperature Range -55°C to +125°C Built by 3D+ company, using 3D+ Die Stacking Technology and Tested by Atmel
Description
The AT61162E is a Rad Hard module, highly-integrated and very low-power
CMOS static RAM organized as 2M x 8 b...