PD - 97640
AUTOMOTIVE GRADE
● ● ● ● ● ● ● ● ●
Advanced Planar Technology Low On-Resistance Dual P-Channel
MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified*
AUIRF7342Q
S1 G1 S2 G2
1 2 3 4 8 7
HEXFET® Power
MOSFET
D1 D1 D2 D2
V(BR)DSS RDS(on) max.
ID
-55V 0.
105Ω -3.
4A
6 5
Top View
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well know...