AUTOMOTIVE
MOSFET
PD - 96366B
AUIRF7379Q
Features
l l l l l l l l
HEXFET® Power
MOSFET
N-CHANNEL
MOSFET 1 8 2 3 4 7 6 5
Advanced Planar Technology Low On-Resistance Dual N and P Channel
MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant
N-Ch
D1 D1 D2 D2
P-Ch -30V
S1 G1 S2 G2
V(BR)DSS RDS(on) typ.
30V
0.
038Ω 0.
070Ω
P-CHANNEL
MOSFET
max.
0.
045Ω 0.
090Ω ID 5.
8A -4.
3A
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these A...