AUTOMOTIVE GRADE
AUIRFN7107
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® POWER
MOSFET
VDSS
RDS(on) max (@VGS = 10V)
QG (typical)
75V 8.
5m 51nC
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this prod...