INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min.
) ·Low Collector Saturation
Voltage
: VCE(sat)= -1.
5V(Max)@IC= -2A ·Complement to Type 2SD1310
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-60 V
VCEO Collector-Emitter
Voltage
-60 V
VEBO Emitter-Base
Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.
6 A 30 W 150 ℃ -55~150 ℃
Produ...