TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
• High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation
voltage: VCE (sat) = −1.
5 V (max) (IC = −1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−100
V
Collector-emitter
voltage
VCEO
−100
V
Emitter-base
voltage
VEBO −7 V
Collector current
DC Peak
IC
−2 A
ICP −3
Base current
IB −0.
5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.
0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
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