Power Transistors
2SB1490
Silicon PNP epitaxial planar type darlington
Unit: mm
(10.
0) (6.
0) (2.
0) (4.
0)
For power amplification Complementary to 2SD2250 ■ Features
• Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation
voltage VCE(sat)
26.
0±0.
5
20.
0±0.
5 φ 3.
3±0.
2
5.
0±0.
3 (3.
0)
(3.
0)
(1.
5)
(1.
5) 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 0.
6±0.
2 5.
45±0.
3 (1.
5) 2.
7±0.
3
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tst...