Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2340
Unit: mm
15.
0±0.
5 13.
0±0.
5 4.
5±0.
2
M Di ain sc te on na tin nc ue e/ d
4.
0±0.
1
s Features
q q q
10.
5±0.
5
4.
0±0.
1
2.
0±0.
1
Parameter
Symbol VCBO VCEO VEBO ICP IC
Ratings –130 –110 –5
Unit V V V A A
12.
5
s Absolute Maximum Ratings
Collector to base
voltage
(TC=25˚C)
Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current
Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
PC Tj
Tstg
–55 to +150
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚...